| PART |
Description |
Maker |
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| MH8S64BBKG-10 MH8S64BBKG-10L B99006 MH8S64BBKG-8L |
From old datasheet system
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH8S64DBKG-8L MH8S64DBKG-7 MH8S64DBKG-7L MH8S64DBK |
From old datasheet system
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH8V64AWZJ-5 MH8V64AWZJ-6 |
FAST PAGE MODE 536870912 - BIT ( 8388608 - WORD BY 64 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH8S64DALD-6 MH8S64DALD-7 MH8S64DALD-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| MH8S64FFC-10 MH8S64FFC-10L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| MH8S64PHC-10 MH8S64PHC-7 MH8S64PHC-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| IC62VV1008LL IC62VV1008L IC62VV1008L-100B IC62VV10 |
70ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
100ns; 1.8V; 1M x 8 ultra low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MAX161 MAX161ACPI MAX161ACWI MAX161AEPI MAX161AEWI |
CMOS, 20µs, 8-Bit, 8-Channel Data Acquisition System
CMOS 8-Bit 8-Channel Data Acquisition System
CMOS 8Bits 8 Channel DAS(CMOS 8 通道数据采集系统)
16-Bit Ultra-Low-Power MCU, 116KB Flash, 8KB RAM, 12-Bit ADC, Dual DAC, DMA, 3 OPAMP, 160 Seg LCD 100-LQFP -40 to 85 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, CDIP28
CMOS 8-Bit 8Channel Data Acquisition System 8-CH 8-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO28
CMOS 8-Bit 8Channel Data Acquisition System CMOS0µs位通道数据采集系统
|
MAXIM - Dallas Semiconductor
http://
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
